STM32WB55VCU6 查看數據表（PDF） - STMicroelectronics

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STM32WB55VCU6

Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5 and 802.15.4 radio solution

STMicroelectronics 

Electrical characteristics

STM32WB55xx STM32WB35xx

Figure 30. Typical connection diagram using the ADC

RAIN(1)

VAIN

AINx

Cparasitic(2)

VDDA

VT

VT

Ilkg (3)

Sample and hold ADC converter

RADC

CADC

12-bit

converter

MS33900V5

1. Refer to Table 77: ADC characteristics for the values of RAIN, RADC and CADC.

2.

Cpapdaracsaitpicarceitparnecseen(rtseftehretocaTpaabcleita7n2c:eI/oOf

the PCB (dependent

static characteristics

on

for

soldering

the value

and PCB layout quality) plus the

of the pad capacitance). A high

Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.

3. Refer to Table 72: I/O static characteristics for the values of Ilkg.

General PCB design guidelines

Power supply decoupling has to be performed as shown in Figure 16: Power supply scheme

(all packages except UFBGA129 and WLCSP100). The 10 nF capacitor needs to be

ceramic (good quality), placed as close as possible to the chip.

6.3.21 Voltage reference buffer characteristics

Table 83. VREFBUF characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDDA

Analog supply

voltage

Normal mode

Degraded mode(2)

VREFBUF_

OUT

Voltage

reference output

Normal mode

Degraded mode(2)

TRIM

Trim step

resolution

-

CL

Load capacitor

-

Equivalent

esr

series resistor

-

of Cload

Iload

Static load

current

-

VRS = 0

VRS = 1

VRS = 0

VRS = 1

VRS = 0

VRS = 1

VRS = 0

VRS = 1

-

-

-

-

2.4

-

3.6

2.8

-

3.6

1.65

-

2.4

1.65

2.046(3)

2.498(3)

-

2.8

2.048 2.049(3)

V

2.5 2.502(3)

VDDA-150 mV

-

VDDA-150 mV

-

VDDA

VDDA

-

±0.05 ±0.1

%

0.5

1

1.5

µF

-

-

2

Ω

-

-

4

mA

152/193

DS11929 Rev 10

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