2N6302 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6302 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 70V; IB= 0
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
hFE-2
DC Current Gain
IC= 16A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 1A ; VCE= 10V; f= 1.0MHz
2N6302
MIN MAX UNIT
120
V
1.0
V
2.0
V
1.8
V
1.5
V
2.0 mA
1.0 mA
1.0 mA
15
60
4
0.2
MHz
SPTECH website：www.superic-tech.com
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