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ST62T03LN6 查看數據表(PDF) - STMicroelectronics

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ST62T03LN6 Datasheet PDF : 100 Pages
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ST6200C/ST6201C/ST6203C
11.6 MEMORY CHARACTERISTICS
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
11.6.1 RAM and Hardware Registers
Symbol
Parameter
VRM
Data retention1)
Conditions
Min
Typ
Max
0.7
11.6.2 EPROM Program Memory
Symbol
Parameter
tret
Data retention 2)
Conditions
TA=+55°C 3)
Min
Typ
Max
10
Figure 49. EPROM Retention Time vs. Temperature
Unit
V
Unit
years
Retention time [Years]
100000
10000
1000
100
10
1
0.1
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90 100 110 120
Temperature [°C]
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in STOP mode or under RESET) or in hardware reg-
isters (only in STOP mode). Guaranteed by construction, not tested in production.
2. Data based on reliability test results and monitored in production. For OTP devices, data retention and programmability
must be guaranteed by a screening procedure. Refer to Application Note AN886.
3. The data retention time increases when the TA decreases, see Figure 49.
72/100
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