STM32L152R8H6(2013) 查看數據表（PDF） - STMicroelectronics

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STM32L152R8H6
(Rev.:2013)

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

Electrical characteristics

STM32L151x6/8/B, STM32L152x6/8/B

Table 13. Thermal characteristics

Symbol

Ratings

TSTG

TJ

Storage temperature range

Maximum junction temperature

Value

Unit

–65 to +150

°C

150

°C

6.3

6.3.1

Operating conditions

General operating conditions

Table 14. General operating conditions

Symbol

Parameter

Conditions

Min Max Unit

fHCLK

fPCLK1

fPCLK2

Internal AHB clock frequency

Internal APB1 clock frequency

Internal APB2 clock frequency

BOR detector disabled

0

32

0

32

0

32

1.65 3.6

MHz

VDD

Standard operating voltage

BOR detector enabled,

at power on

1.8 3.6

V

BOR detector disabled,

after power on

1.65

3.6

VDDA(1)

Analog operating voltage

(ADC and DAC not used)

Analog operating voltage

(ADC or DAC used)

1.65 3.6

Must be the same voltage

as VDD(2)

1.8 3.6

V

PD

Power dissipation at

TA = 85 °C(3)

TA

Temperature range

BGA100 package

339 mW

Maximum power dissipation –40 85

Low power dissipation(4)

°C

–40 105

TJ

Junction temperature range -40 °C ≤ TA ≤ 105 °C

–40 105

°C

1. When the ADC is used, refer to Table 54: ADC characteristics.

2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV

between VDD and VDDA can be tolerated during power-up and operation.

3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 68: Thermal

characteristics on page 114).

4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJ max

(see Table 68: Thermal characteristics on page 114).

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Doc ID 17659 Rev 8

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