STM32F103VB 查看數據表（PDF） - STMicroelectronics

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STM32F103VB

Performance line, ARM-based 32-bit MCU with Flash, USB, CAN, seven 16-bit timers, two ADCs and nine communication interfaces

STMicroelectronics 

STM32F103xx

Electrical characteristics

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = −40 to 105 °C unless otherwise specified.

Table 23. Flash memory characteristics

Symbol

Parameter

Conditions

Min Typ Max(1) Unit

tprog

Word programming time

TA = −40 to +105 °C 20

tERASE

Page (1kB) erase time

TA = −40 to +105 °C 20

tME

Mass erase time

TA = −40 to +105 °C 20

Read mode

fHCLK = 72 MHz with

2 wait states,

VDD = 3.3 V

IDD

Supply current

Write / Erase modes

fHCLK = 72 MHz,

VDD = 3.3 V

Power-down mode /

HALT,

VDD = 3.0 to 3.6 V

1. Values based on characterization and not tested in production.

40

µs

40 ms

40 ms

20 mA

5

mA

50 µA

Table 24. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Min(1) Typ Max

Unit

NEND Endurance

tRET Data retention

TA = 85 °C

1. Values based on characterization not tested in production.

1

10

30

kcycles

Years

39/67

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