R5F10366GNA-V0 查看數據表（PDF） - Renesas Electronics

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R5F10366GNA-V0

RENESAS MCU True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation, 2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications

Renesas Electronics 

RL78/G12

2. ELECTRICAL SPECIFICATIONS (A, D: TA = −40 to +85°C)

<R> (8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock

output) (2/3)

(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

HS (high-speed LS (low-speed

Unit

main) Mode

main) Mode

MIN. MAX. MIN. MAX.

SIp setup time

tSIK1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

81

479

ns

(to SCKp↑) Note 1

Cb = 30 pF, Rb = 1.4 kΩ

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

177

479

ns

Cb = 30 pF, Rb = 2.7 kΩ

1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,

479

479

ns

Cb = 30 pF, Rb = 5.5 kΩ

SIp hold time

tKSI1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

19

19

ns

(from SCKp↑) Note 1

Cb = 30 pF, Rb = 1.4 kΩ

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

19

19

ns

Cb = 30 pF, Rb = 2.7 kΩ

1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,

19

19

ns

Cb = 30 pF, Rb = 5.5 kΩ

Delay time from

SCKp↓ to

SOp output Note 1

tKSO1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

Cb = 30 pF, Rb = 1.4 kΩ

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

Cb = 30 pF, Rb = 2.7 kΩ

100

100

ns

195

195

ns

1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,

Cb = 30 pF, Rb = 5.5 kΩ

483

483

ns

<R> Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.

<R>

2. Use it with VDD ≥ Vb.

(Cautions and Remarks are listed on the next page.)

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 44 of 106

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