STM32F302VB 查看數據表（PDF） - STMicroelectronics

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STM32F302VB

ARM®-based Cortex®-M4 32b MCU+FPU, up to 256KB Flash+ 40KB SRAM, 2 ADCs, 1 DAC ch., 4 comp, 2 PGA, timers, 2.0-3.6 V

STMicroelectronics 

Electrical characteristics

STM32F302xB STM32F302xC

Figure 17. Typical application with a 32.768 kHz crystal

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Note:

6.3.8

069

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

Internal clock source characteristics

The parameters given in Table 44 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 24.

High-speed internal (HSI) RC oscillator

Table 44. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min Typ

fHSI

Frequency

-

-

8

TRIM HSI user trimming step

-

-

-

DuCy(HSI) Duty cycle

-

45(2)

-

TA = -40 to

105°C

-2.8(3)

-

TA = -10 to 85°C -1.9(3)

-

ACCHSI

Accuracy of the HSI oscillator TA = 0 to 85°C

-1.9(3)

-

TA = 0 to 70°C -1.3(3)

-

TA = 0 to 55°C

-1(3)

-

TA = 25°C(4)

-1

-

tsu(HSI) HSI oscillator startup time

-

1(2)

-

IDDA(HSI)

HSI oscillator power

consumption

-

-

80

1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

2. Guaranteed by design.

3. Guaranteed by characterization results.

4. Factory calibrated, parts not soldered.

Max

-

1(2)

55(2)

3.8(3)

2.3(3)

2(3)

2(3)

2(3)

1

2(2)

100(2)

Unit

MHz

%

%

%

µs

µA

78/144

DocID025186 Rev 7

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