STL160N3LLH6 查看數據表（PDF） - STMicroelectronics

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STL160N3LLH6

N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

STL160N3LLH6

N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6

STripFET™ VI DeepGATE™ Power MOSFET

Features

Order code

STL160N3LLH6

VDSS

30 V

RDS(on)

max

0.0013 Ω

ID

35 A (1)

1. The value is rated according Rthj-pcb

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

1

2

3

4

PowerFLAT™ 5x6

Figure 1. Internal schematic diagram



 

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Table 1. Device summary

Order code

Marking

STL160N3LLH6

160N3LLH6

Package

PowerFLAT™ 5x6

Packaging

Tape and reel

November 2011

Doc ID 18223 Rev 2

1/16

www.st.com

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