STL150N3LLH5 查看數據表（PDF） - STMicroelectronics

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STL150N3LLH5

N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET

STMicroelectronics 

STL150N3LLH5

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD = 35 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 35 A,

di/dt = 100 A/µs,

VDD= 25 V

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

35 A

-

140 A

-

1.1 V

43.8

ns

-

46

nC

2.1

A

Doc ID 14092 Rev 4

5/12

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