STF7N65M2 查看數據表（PDF） - STMicroelectronics
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STF7N65M2
STMicroelectronics
STF7N65M2 Datasheet PDF : 13 Pages
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STF7N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
IDM(2)
PTOT
VISO
dv/dt (3)
dv/dt(4)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s; TC=25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
4. VDS ≤ 520 V
Symbol
Table 3. Thermal data
Parameter
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax )
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50)
Value
± 25
5(1)
3.2(1)
20(1)
20
2500
15
50
- 55 to 150
Unit
V
A
A
A
W
V
V/ns
°C
Value
6.25
62.5
Unit
°C/W
°C/W
Value
Unit
1
A
103
mJ
DocID026763 Rev 2
3/13
13
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