NAND04GA3C2N6E 查看數據表（PDF） - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

12 DC and AC parameters

NAND04GA3C2A, NAND04GW3C2A

Figure 15. Data Input Latch AC Waveforms

tWHCLH

(CL Hold time)

CL

tWHEH

(E Hold time)

E

tALLWH

(ALSetup time)

AL

tWLWL

tWLWH

tWLWH

tWLWH

W

tDVWH

(Data Setup time)

tDVWH

tDVWH

tWHDX

(Data Hold time)

tWHDX

tWHDX

I/O

Data In 0

Data In 1

Data In

Last

1. Last Data In is 2111b.

Figure 16. Sequential Data Output after Read AC Waveforms

tRLRL

(Read Cycle time)

E

tRHRL

(R High Holdtime)

R

tRLQV

(R Accesstime)

tRLQV

tRHQZ

I/O

tBHRL

Data Out

Data Out

RB

tEHQZ

tRLQV

tRHQZ

Data Out

ai12707

1. CL = Low, AL = Low, W = High.

ai08031

40/51

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