P06B03LVG 查看數據表（PDF） - Niko Semiconductor
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P06B03LVG Datasheet PDF : 5 Pages
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NIKO-SEM Dual P-Channel Logic Level Enhancement P06B03LVG
Mode Field Effect Transistor
SOP-8
Lead Free
Forward Transconductance1
gfs
VDS = -10V, ID = -6A
16
S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
530
135
pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qg s
VDS = 0.5V , (BR)DSS VGS = -10V,
Qgd
ID = -6A
td(on)
tr
VDS = -15V, RL = 1Ω
td(off)
ID ≅ -1A, VGS = -10V, RGS = 6Ω
tf
70
10 14
2.2
nC
2
5.7
10
nS
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD
IF = -1A, VGS = 0V
Reverse Recovery Time
trr
IF = -5A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-2.1
A
-4
-1.2 V
15.5
nS
7.9
nC
REMARK: THE PRODUCT MARKED WITH “P06B03LVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
May-04-2005
2
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