STL24N60M2(2014) 查看數據表（PDF） - STMicroelectronics

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STL24N60M2
(Rev.:2014)

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL24N60M2

N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg

Power MOSFET in a PowerFLAT™ 8x8 HV package

Datasheet − production data

Features

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Figure 1. Internal schematic diagram

D(3)

G(1)

S(2)

AM01476v1

Order code VDS @ TJmax RDS(on) max ID

STL24N60M2

650 V

0.21 Ω 18 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Order code

STL24N60M2

Table 1. Device summary

Marking

Package

24N60M2

PowerFLAT™ 8x8 HV

Packaging

Tape and reel

February 2014

This is information on a product in full production.

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