16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
Advance Information
AC CHARACTERISTICS
TABLE 12: (P)SRAM READ CYCLE TIMING PARAMETERS
Min
Max
Units
TRCS
Read Cycle Time
70
ns
TAAS
Address Access Time
70
ns
TBES
Bank Enable Access Time
70
ns
TOES
Output Enable Access Time
35
ns
TBYES
TBLZS1
TOLZS1
TBYLZS1
TBHZS1
TOHZS1
TBYHZS1
UBS#, LBS# Access Time
BES# to Active Output
Output Enable to Active Output
UBS#, LBS# to Active Output
BES# to High-Z Output
Output Disable to High-Z Output
UBS#, LBS# to High-Z Output
70
ns
0
ns
0
ns
0
ns
25
ns
25
ns
35
ns
TOHS
Output Hold from Address Change
10
ns
T12.0 1256
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: (P)SRAM WRITE CYCLE TIMING PARAMETERS
Symbol
TWCS
TBWS
TAWS
TASTS
TWPS
TWRS
TBYWS
TODWS
TOEWS
TDSS
TDHS
Parameter
Write Cycle Time
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
UBS#, LBS# to End-of-Write
Output Disable from WE# Low
Output Enable from WE# High
Data Set-up Time
Data Hold from Write Time
Min
Max
Units
70
ns
60
ns
60
ns
0
ns
60
ns
0
ns
60
ns
30
ns
0
ns
30
ns
0
ns
T13.0 1256
©2004 Silicon Storage Technology, Inc.
18
S71256-00-000
3/04