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SST32HF802-70-4C-LBKE 查看數據表(PDF) - Silicon Storage Technology

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SST32HF802-70-4C-LBKE
SST
Silicon Storage Technology 
SST32HF802-70-4C-LBKE Datasheet PDF : 30 Pages
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Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF202 / SST32HF402 / SST32HF802
ADDRESSES AMSS-0
BES#
OE#
UBS#, LBS#
DQ15-0
TRCS
TAAS
TBES
TBLZS
TOES
TOLZS
TBYES
TBYLZS
TOHS
TBHZS
TOHZS
TBYHZS
DATA VALID
Note: WE# remains High (VIH) for the Read cycle
AMSS = Most Significant SRAM Address
Data Sheet
1209 F02.0
FIGURE 3: SRAM READ CYCLE TIMING DIAGRAM
ADDRESSES AMSS-0
WE#
BES#
TWCS
TASTS
TWPS
TBWS
TAWS
TWRS
UBS#, LBS#
DQ15-8, DQ7-0
TBYWS
TODWS
NOTE 2
TDSS
TOEWS
TDHS
VALID DATA IN
NOTE 2
1209 F03.1
Notes: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. If BES# goes Low coincident with or after WE# goes Low, the output will remain at high impedance.
If BES# goes High coincident with or before WE# goes High, the output will remain at high impedance.
Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.
FIGURE 4: SRAM WRITE CYCLE TIMING DIAGRAM (WE# CONTROLLED)1
©2005 Silicon Storage Technology, Inc.
13
S71209-06-000
5/05

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