NAND512W4A2BN6E 查看數據表（PDF） - STMicroelectronics

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NAND512W4A2BN6E

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

STMicroelectronics 

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

Figure 30. Read C Operation, One Page AC Waveform

CL

E

W

tWHBH

tWHALL

AL

tBHRL

tALLRL2

R

I/O

50h

Add. M Add. M Add. M Add. M

cycle 1 cycle 2 cycle 3 cycle 4

Data M

Data

Last

RB

Command

Code

Address M Input

Busy

Data Output from M to

Last Byte or Word in Area C

Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are ‘don’t care’.

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