M59DR008F100N6 查看數據表（PDF） - STMicroelectronics

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M59DR008F100N6

8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory

STMicroelectronics 

M59DR008E, M59DR008F

Table 28. Data Polling and Toggle Bits AC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C; VDD = VDDQ = 1.65V to 2.2V)

Symbol

Parameter

M59DR008

Unit

Min

Max

Write Enable High to DQ7 Valid (Program, W Controlled)

10

tWHQ7V

Write Enable High to DQ7 Valid (Block Erase, W Controlled)

1.0

200

µs

10

sec

Chip Enable High to DQ7 Valid (Program, E Controlled)

10

tEHQ7V

Chip Enable High to DQ7 Valid (Block Erase, E Controlled)

1.0

200

µs

10

sec

tQ7VQV

Q7 Valid to Output Valid (Data Polling)

0

ns

tWHQV

Write Enable High to Output Valid (Program)

Write Enable High to Output Valid (Block Erase)

10

200

µs

1.0

10

sec

tEHQV

Chip Enable High to Output Valid (Program)

Chip Enable High to Output Valid (Block Erase)

10

200

µs

1.0

10

sec

Note: 1. All other timings are defined in Read AC Characteristics table.

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