M58WR064F-ZBF 查看數據表（PDF） - STMicroelectronics

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M58WR064F-ZBF

64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064FT, M58WR064FB

Figure 26. Block Erase Flowchart and Pseudo Code

Start

Write 20h (2)

Write Block

Address & D0h

Read Status

Register (2)

erase_command ( blockToErase ) {

writeToFlash (blockToErase, 0x20) ;

/*see note (2) */

writeToFlash (blockToErase, 0xD0) ;

/* only A12-A21 are significant */

/* Memory enters read status state after

the Erase Command */

do {

status_register=readFlash (blockToErase) ;

/* see note (2) */

/* E or G must be toggled*/

NO

SR7 = 1

YES

NO

SR3 = 0

YES

YES

SR4, SR5 = 1

NO

NO

SR5 = 0

YES

NO

SR1 = 0

YES

End

VPP Invalid

Error (1)

Command

Sequence Error (1)

Erase Error (1)

Erase to Protected

Block Error (1)

} while (status_register.SR7== 0) ;

if (status_register.SR3==1) /*VPP invalid error */

error_handler ( ) ;

if ( (status_register.SR4==1) && (status_register.SR5==1) )

/* command sequence error */

error_handler ( ) ;

if ( (status_register.SR5==1) )

/* erase error */

error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */

error_handler ( ) ;

}

Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations.

2. Any address within the bank can be used also.

AI10526

74/87

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