M58WR064F-ZBF 查看數據表（PDF） - STMicroelectronics
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M58WR064F-ZBF Datasheet PDF : 87 Pages
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M58WR064FT, M58WR064FB
Table 33. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0017h Device Size = 2n in number of bytes
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2Dh
007Eh Region 1 Information
2Eh
0000h Number of identical-size erase blocks = 007Eh+1
2Fh
0000h Region 1 Information
30h
0001h Block size in Region 1 = 0100h * 256 byte
31h
0007h Region 2 Information
32h
0000h Number of identical-size erase blocks = 0007h+1
33h
0020h Region 2 Information
34h
0000h Block size in Region 2 = 0020h * 256 byte
35h
38h
reserved Reserved for future erase block region information
2Dh
0007h Region 1 Information
2Eh
0000h Number of identical-size erase block = 0007h+1
2Fh
0020h Region 1 Information
30h
0000h Block size in Region 1 = 0020h * 256 byte
31h
007Eh Region 2 Information
32h
0000h Number of identical-size erase block = 007Eh+1
33h
0000h Region 2 Information
34h
0001h Block size in Region 2 = 0100h * 256 byte
35h
38h
reserved Reserved for future erase block region information
Value
8 MByte
x16
Async.
NA
2
127
64 KByte
8
8 KByte
NA
8
8 KByte
127
64 KByte
NA
64/87
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