M25PE10-VMN6P 查看數據表（PDF） - STMicroelectronics

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M25PE10-VMN6P

1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout

STMicroelectronics 

M25PE20, M25PE10

Power-up and power-down

Figure 25. Power-up timing

VCC

VCC(max)

Program, Erase and Write Commands are Rejected by the Device

Chip Selection Not Allowed

VCC(min)

Reset State

of the

Device

VWI

tVSL

Read Access allowed

Device fully

accessible

tPUW

time

AI04009C

Table 13. Power-up timing and VWI threshold

Symbol

Parameter

Min.

tVSL(1) VCC(min) to S low

30

tPUW(1) Time delay before the first Write, Program or Erase instruction

1

VWI(1) Write Inhibit Voltage

1.5

1. These parameters are characterized only, over the temperature range –40°C to +85°C.

Max. Unit

µs

10 ms

2.5

V

45/60

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