M25P20-VMN6TP_X 查看數據表（PDF） - STMicroelectronics

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M25P20-VMN6TP_X

2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface

STMicroelectronics 

M25P20

DC and AC parameters

Table 16.

Symbol

Instruction Times (Device Grade 3)

Test conditions specified in Table 10 and Table 17

Alt.

Parameter

Min. Typ(1) (2) Max(2) Unit

tW

tPP(3)

Write Status Register Cycle Time

Page Program Cycle Time (256 Bytes)

Page Program Cycle Time (n Bytes)

8

15 ms

1.5

0.4+

5

ms

n*1.1/256

tSE

Sector Erase Cycle Time

1

3

s

tBE

Bulk Erase Cycle Time

2.8

6

s

1. At 85°C

2. Preliminary data.

3. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are

obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤

256)

Table 17. AC Measurement Conditions

Symbol

Parameter

Min.

Max.

Unit

CL

Load Capacitance

Input Rise and Fall Times

Input Pulse Voltages

Input Timing Reference Voltages

Output Timing Reference Voltages

30

pF

5

ns

0.2VCC to 0.8VCC

V

0.3VCC to 0.7VCC

V

VCC / 2

V

1. Output Hi-Z is defined as the point where data out is no longer driven.

Figure 21. AC Measurement I/O Waveform

Input Levels

0.8VCC

0.2VCC

Input and Output

Timing Reference Levels

0.7VCC

0.5VCC

0.3VCC

AI07455

39/50

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