IC42S32200-6BG 查看數據表（PDF） - Integrated Circuit Systems

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IC42S32200-6BG

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Systems 

IC42S32200

IC42S32200L

Figure 12.3.Random Row Write (Interleaving Banks)

(Burst Length=8,CAS#Latency=3)

T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CLK

tCK3

CKE High

CS#

RAS#

CAS#

WE#

BS0,1

A10

RAx

RBx

RAy

A0-A9

DQM

RAx

CAx

tRCD

RBx

CBx

RAy

CAy

tWR*

tRP

tWR*

Hi-Z

DQ

DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3

Activate

Command

Bank A

Write

Command

Bank A

* tWR > tWR(min.)

Activate

Command

Bank B

Write

Command

Bank B

Precharge

Command

Bank A

Activate

Command

Bank A

Write

Command

Bank A

Precharge

Command

Bank B

Integrated Circuit Solution Inc.

41

DR036-0D 02/04/2005

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