C8051F93X-C8051F92X 查看數據表（PDF） - Silicon Laboratories

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C8051F93X-C8051F92X

Single/Dual Battery, 0.9–3.6 V, 64/32 kB, SmaRTClock, 10-Bit ADC MCU

Silicon Laboratories 

C8051F93x-C8051F92x

Table 4.10. Temperature Sensor Electrical Characteristics

VDD = 1.8 to 3.6V V, –40 to +85 °C unless otherwise specified.

Parameter

Linearity

Conditions

Min

—

Slope

—

Slope Error*

—

Offset

Temp = 25 °C

—

Offset Error*

Temp = 25 °C

—

Temperature Sensor Turn-On

—

Time

Supply Current

—

*Note: Represents one standard deviation from the mean.

Typ

±1

3.40

40

1025

18

1.7

35

Max

—

—

—

—

—

—

—

Units

°C

mV/°C

µV/°C

mV

mV

µs

µA

Table 4.11. Voltage Reference Electrical Characteristics

VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.

Parameter

Output Voltage

VREF Turn-on Time

Conditions

Min Typ

Internal High Speed Reference (REFSL[1:0] = 11)

–40 to +85 °C,

VDD = 1.8–3.6 V

1.60 1.65

—

—

Supply Current

—

200

Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)

Output Voltage

–40 to +85 °C,

VDD = 1.8–3.6 V

1.645 1.680

VREF Short-Circuit Current

—

3.5

Load Regulation

VREF Turn-on Time 1

VREF Turn-on Time 2

VREF Turn-on Time 3

Load = 0 to 200 µA to AGND

—

400

4.7 µF tantalum, 0.1 µF ceramic

—

15

bypass, settling to 0.5 LSB

0.1 µF ceramic bypass, settling to —

300

0.5 LSB

no bypass cap, settling to 0.5 LSB —

25

Supply Current

—

15

Input Voltage Range

External Reference (REFSL[1:0] = 00, REFOE = 0)

0

—

Input Current

Sample Rate = 300 ksps; VREF = —

5.25

3.0 V

Max

1.70

1.5

—

1.715

—

—

—

—

—

—

VDD

—

Units

V

µs

µA

V

mA

µV/µA

ms

µs

µs

µA

V

µA

62

Rev. 1.3

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