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C8051F91X-C8051F90X 查看數據表(PDF) - Silicon Laboratories

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C8051F91X-C8051F90X Datasheet PDF : 318 Pages
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C8051F91x-C8051F90x
Table 4.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the
‘F9xx" for details on how to achieve the supply current specifications listed in this table.
Parameter
Conditions
Digital Supply Current—Suspend and Sleep Mode
Digital Supply Current6
(Suspend Mode)
VDD = 1.8–3.6 V, two-cell mode
Digital Supply Current
1.8 V, T = 25 °C
(Sleep Mode, SmaRTClock run- 3.0 V, T = 25 °C
ning, 32.768 kHz crystal)
3.6 V, T = 25 °C
1.8 V, T = 85 °C
3.0 V, T = 85 °C
3.6 V, T = 85 °C
(includes SmaRTClock oscillator and VBAT
Supply Monitor)
Digital Supply Current8
1.8 V, T = 25 °C
(Sleep Mode, SmaRTClock run- (includes SmaRTClock oscillator and VBAT
ning, internal LFO)
Supply Monitor)
Digital Supply Current
(Sleep Mode)
1.8 V, T = 25 °C
3.0 V, T = 25 °C
3.6 V, T = 25 °C
1.8 V, T = 85 °C
3.0 V, T = 85 °C
3.6 V, T = 85 °C
(includes VBAT supply monitor)
Digital Supply Current (Sleep
Mode, VBAT Supply Monitor
Disabled)9
1.8 V, T = 25 °C
Min Typ Max Units
77
µA
— 0.60 —
µA
— 0.75 —
— 0.85 —
— 1.30 —
— 1.60 —
— 1.90 —
— 0.3 —
µA
— 0.05 —
µA
— 0.08 —
— 0.12 —
— 0.75 —
— 0.90 —
— 1.20 —
— 0.01 —
µA
Rev. 1.0
39

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