C8051F902-GD 查看數據表（PDF） - Silicon Laboratories

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C8051F902-GD

Single/Dual Battery, 0.9–3.6 V, 16–8 kB, SmaRTClock, 12/10-Bit ADC MCU

Silicon Laboratories 

C8051F91x-C8051F90x

Table 4.2. Global Electrical Characteristics (Continued)

–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the

‘F9xx" for details on how to achieve the supply current specifications listed in this table.

Parameter

Conditions

Min Typ

Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)

IDD 3, 4, 5, 6

VDD = 1.8–3.6 V, F = 24.5 MHz 

(includes precision oscillator current)

— 4.0

VDD = 1.8–3.6 V, F = 20 MHz

(includes low power oscillator current)

— 3.4

VDD = 1.8 V, F = 1 MHz

VDD = 3.6 V, F = 1 MHz

(includes external oscillator/GPIO current)

— 265

— 305

VDD = 1.8–3.6 V, F = 32.768 kHz 

(includes SmaRTClock oscillator current)

—

84

IDD Frequency Sensitivity3, 5, 6 VDD = 1.8–3.6 V, T = 25 °C, F < 14 MHz

(Flash oneshot active, see Section 13.6)

— 191

VDD = 1.8–3.6 V, T = 25 °C, F > 14 MHz

(Flash oneshot bypassed, see Section 13.6)

— 102

Digital Supply Current—CPU Inactive (Idle Mode, not fetching instructions from Flash)

IDD4, 6, 7

VDD = 1.8–3.6 V, F = 24.5 MHz 

(includes precision oscillator current)

— 2.1

VDD = 1.8–3.6 V, F = 20 MHz

(includes low power oscillator current)

— 1.6

VDD = 1.8 V, F = 1 MHz

VDD = 3.6 V, F = 1 MHz

(includes external oscillator/GPIO current)

— 160

— 185

VDD = 1.8–3.6 V, F = 32.768 kHz (includes

SmaRTClock oscillator current)

—

82

IDD Frequency Sensitivity1,6,7 VDD = 1.8–3.6 V, T = 25 °C

—

79

Max Units

5.0

mA

—

mA

—

µA

—

µA

—

µA

— µA/MHz

— µA/MHz

3.0

mA

—

mA

—

µA

—

µA

—

µA

— µA/MHz

38

Rev. 1.0

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