M5M5256DFP-10VXL-I 查看數據表（PDF） - MITSUBISHI ELECTRIC

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M5M5256DFP-10VXL-I

262144-bit (32768-word by 8-bit) CMOS static RAM

MITSUBISHI ELECTRIC  

'97.4.7

MITSUBISHI LSIs

M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I,

-10VXL-I,-12VXL-I,-15VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

POWER DOWN CHARACTERISTICS

(1) ELECTRICAL CHARACTERISTICS (Ta = -40~85°C, Vcc=2.7~3.6V, unless otherwise noted)

Symbol

Parameter

Vcc (PD) Power down supply voltage

VI (/S)

Chip select input /S

Icc (PD) Power down supply current

Test conditions

Limits

Min Typ Max

Unit

2

V

2

V

Vcc = 3V,/S≥Vcc-0.2V,

Other inputs=0~Vcc

-VLL

-VXL

20

(Note 7)

uA

0.05

4

(Note 8)

Note7: ICC (PD) = 1uA in case of Ta = 25°C

Note8: ICC (PD) = 0.2uA in case of Ta = 25°C

(2) TIMING REQUIREMENTS (Ta = -40~85°C, Vcc=2.7~3.6V, unless otherwise noted )

Symbol

tsu (PD)

trec (PD)

Parameter

Power down set up time

Power down recovery time

Test conditions

Limits

Min Typ Max

Unit

0

ns

tCR

ns

(3) POWER DOWN CHARACTERISTICS

/S control mode

Vcc

tsu (PD)

2.7V

2.7V

trec (PD)

2.0V

/S

/S≥Vcc-0.2V

2.0V

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