MT29F16G08AJBDAHCITX 查看數據表（PDF） - Micron Technology
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MT29F16G08AJBDAHCITX Datasheet PDF : 132 Pages
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Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Asynchronous Interface Bus Operation
Figure 19: tFall and tRise (3.3V VCC)
3.50
3.00
2.50
2.00
V
1.50
tFall tRise
1.00
0.50
0.00
–1
0
2
4
0
TC
2
4
6
VCC 3.3V
Notes:
1. tFall and tRise calculated at 10% and 90% points.
2. tRise dependent on external capacitance and resistive loading and output transistor im-
pedance.
3. tRise primarily dependent on external pull-up resistor and external capacitive loading.
4. tFall = 10ns at 3.3V.
5. See TC values in Figure 23 (page 29) for approximate Rp value and TC.
Figure 20: tFall and tRise (1.8V VCC)
3.50
3.00
2.50
2.00
V
1.50
tFall
tRise
1.00
0.50
0.00
-1
0
2
4
0
2
TC
4
6
VCC1.8V
Notes:
1. tFall and tRise are calculated at 10% and 90% points.
2. tRise is primarily dependent on external pull-up resistor and external capacitive loading.
3. tFall ≈ 7ns at 1.8V.
4. See TC values in Figure 23 (page 29) for TC and approximate Rp value.
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
27
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