STM8S105S4P6CTR 查看數據表（PDF） - STMicroelectronics

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产品描述 (功能)

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STM8S105S4P6CTR

Access line, STM8S 8-bit MCU, up to 32 Kbytes Flash, 10-bit ADC, timers, USART, SPI, I²C

STMicroelectronics 

STM8S103xx, STM8S105xx

Electrical characteristics

Table 11. Current characteristics

Symbol

Ratings

Max.

Unit

IVDD

Total current into VDD power lines (source)(1)

60

IVSS

Total current out of VSS ground lines (sink)(1)

60

Output current sunk by any I/O and control pin

IIO

Output current source by any I/Os and control pin

Injected current on NRST pin

20

- 20

mA

±4

IINJ(PIN)(2)(3) Injected current on OSCIN pin

±4

Injected current on any other pin(4)

±4

ΣIINJ(PIN)(2) Total injected current (sum of all I/O and control pins)(4)

± 20

1. All power (VDD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be connected to the

external supply.

2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum

cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive

injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,

there is no positive injection current, and the corresponding VIN maximum must always be respected

3. Negative injection disturbs the analog performance of the device.

4. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the

positive and negative injected currents (instantaneous values). These results are based on

characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.

Table 12. Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

TJ

Storage temperature range

Maximum junction temperature

-65 to +150

°C

150

37/56

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