VN5010AKTR-E 查看數據表（PDF） - STMicroelectronics

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VN5010AKTR-E

High side driver with analog current sense for automotive applications

STMicroelectronics 

Electrical specifications

VN5010AK-E

Table 4.

Symbol

Absolute maximum ratings (continued)

Parameter

Value

Unit

VCSENSE Current sense maximum voltage

VCC-41

V

+VCC

V

Maximum switching energy (single pulse)

EMAX (L=1.25mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(typ.))

609

mJ

Electrostatic discharge (Human Body Model: R=1.5KΩ; C=100pF)

4000

– Input

2000

– Current Sense

VESD – CS_DIS

4000

V

5000

– Output

5000

– VCC

VESD Charge device model (CDM-AEC-Q100-011)

750

V

Tj Junction operating temperature

-40 to 150 °C

Tstg Storage temperature

-55 to 150 °C

Table 5.

Symbol

Thermal data

Parameter

Rthj-case Thermal resistance junction case (max)

Rthj-amb Thermal resistance junction ambient (max)

Max value

0.3

See Figure 29

Unit

°C/W

°C/W

2.2

Electrical characteristics

Values specified in this section are for 8 V< VCC< 36 V; -40 °C< Tj< 150 °C, unless

otherwise stated (for each channel).

Table 6.

Symbol

Power section

Parameter

Test conditions

Min. Typ. Max. Unit

VCC

Operating supply

voltage

VUSD

Undervoltage

shutdown

VUSDhyst

Undervoltage

shutdown hysteresis

RON

On-state resistance

IOUT= 6A; Tj= 25°C

IOUT= 6A; Tj= 150°C

IOUT=6A; VCC=5V;Tj=25°C

Vclamp Clamp voltage

ICC= 20 mA

IS Supply current

Off-state; VCC= 13V; Tj= 25°C;

VIN=VOUT=VSENSE=VCSD=0V

On-state; VCC=13V; VIN=5V; IOUT=0A

4.5 13 36 V

3.5 4.5 V

0.5

V

10 mΩ

20 mΩ

13 mΩ

41 46 52 V

2(1) 5(1) µA

1.5 3 mA

8/31

Doc ID 13218 Rev 7

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