LH28F160S5HD-L90 查看數據表（PDF） - Sharp Electronics

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LH28F160S5HD-L90

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Sharp Electronics 

LH28F160S5-L/S5H-L

ADDRESSES (A)

WE# (W)

OE# (G)

CE# (E)

DATA (D/Q)

STS (R)

WP# (S)

(NOTE 1) (NOTE 2)

VIH

AIN

VIL

tAVAV

VIH

(NOTE 3)

(NOTE 4)

AIN

tAVEH tEHAX

(NOTE 5)

VIL

tWLEL

VIH

tEHWH

tEHGL

VIL

VIH

VIL

VIH High Z

VIL

tPHEL

High Z

tEHEL

tEHQV1/2/3/4

tELEH

tDVEH

tEHDX

DIN

DIN

tEHRL

Valid

SRD

VIL

tSHEH

VIH

tQVSL

VIL

VIH

RP# (P)

VIL

VPPH1

tVPEH

tQVVL

VPP (V) VPPLK

VIL

(NOTE 6)

DIN

NOTES :

1. VCC power-up and standby.

2. Write erase or write setup.

3. Write erase confirm or valid address and data.

4. Automated erase or program delay.

5. Read status register data.

6. Write Read Array command.

7. CE# is defined as the latter of CE0# and CE1# going Low or the first of CE0# or CE1# going High.

Fig. 18 AC Waveform for CE#-Controlled Write Operations

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