LH28F160S5H-L100 查看數據表（PDF） - Sharp Electronics

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LH28F160S5H-L100

16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Sharp Electronics 

LH28F160S5-L/S5H-L

VIH

ADDRESSES (A)

VIL

VIH

CE# (E)

VIL

VIH

OE# (G)

VIL

VIH

WE# (W)

VIL

VOH

DATA (D/Q)

VOL

Standby

High Z

Device

Address Selection

Data Valid

Address Stable

tAVAV

tELQV

tGLQX

tELQX

tGLQV

tAVQV

Valid Output

tEHQZ

tGHQZ

tOH

High Z

VCC

VIH

RP# (P)

VIL

tPHQV

NOTE :

CE# is defined as the latter of CE0# and CE1# going Low or the first of CE0# or CE1# going High.

Fig. 15 AC Waveform for Read Operations

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