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GE28F800B3TA110 查看數據表(PDF) - Intel

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GE28F800B3TA110 Datasheet PDF : 58 Pages
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
AC Characteristics—Write Operations, continued
Density
64 Mbit
#
Sym
Parameter
Product 90 ns 100 ns
VCC
2.7 V –
3.6 V
2.7 V –
3.6 V
Unit
Note Min
W1
tPHWL /
tPHEL
RP# High Recovery to WE# (CE#) Going Low
150
W2
tELWL /
tWLEL
CE# (WE#) Setup to WE# (CE#) Going Low
0
W3
tELEH /
tWLWH
WE# (CE#) Pulse Width
1
60
W4
tDVWH /
tDVEH
Data Setup to WE# (CE#) Going High
2
40
W5
tAVWH /
tAVEH
Address Setup to WE# (CE#) Going High
2
60
W6
tWHEH /
tEHWH
CE# (WE#) Hold Time from WE# (CE#) High
0
W7
tWHDX /
tEHDX
Data Hold Time from WE# (CE#) High
2
0
W8
tWHAX /
tEHAX
Address Hold Time from WE# (CE#) High
2
0
W9
tWHWL /
tEHEL
WE# (CE#) Pulse Width High
1
30
W10
tVPWH /
tVPEH
VPP Setup to WE# (CE#) Going High
3
200
W11 tQVVL VPP Hold from Valid SRD
3
0
Min
150
ns
0
ns
70
ns
40
ns
60
ns
0
ns
0
ns
0
ns
30
ns
200
ns
0
ns
NOTES:
1. Refer to command definition table (Table 6) for valid AIN or DIN.
2. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going
high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, Write pulse width
high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
(whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
3. Sampled, but not 100% tested.
Read timing characteristics during program suspend and erase suspend are the same as during read-only
operations.
See Figure 5 for timing measurements and maximum allowable input slew rate.
See Figure 8, “AC Waveform: Program and Erase Operations” on page 32.
30
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