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XP1015-BD

  

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MIMIX
Mimix Broadband
XP1015-BD 43.5-46.5 GHz GaAs MMIC Power Amplifier

General Description
Mimix Broadbands three stage balanced 43.5 - 46.5 GHz GaAs MMIC power amplifier has a small signal gain of 13.0 dB with a +31.0 dBm P1dB output compression point. The device also includes Lange couplers to achieve good input and output return loss This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
• Excellent Saturated Output Stage
• Balanced Design Provides Good Input/Output Match
• 13.0 dB Small Signal Gain
• +31.0 dBm P1dB Compression Point
• 100% On-Wafer RF, DC and Output Power Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010


other parts : XP1015-BD-000V  XP1015-BD-EV1  
XP1015-BD PDF
MIMIX
Mimix Broadband
XP1015-BD-EV1 43.5-46.5 GHz GaAs MMIC Power Amplifier

General Description
Mimix Broadbands three stage balanced 43.5 - 46.5 GHz GaAs MMIC power amplifier has a small signal gain of 13.0 dB with a +31.0 dBm P1dB output compression point. The device also includes Lange couplers to achieve good input and output return loss This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
• Excellent Saturated Output Stage
• Balanced Design Provides Good Input/Output Match
• 13.0 dB Small Signal Gain
• +31.0 dBm P1dB Compression Point
• 100% On-Wafer RF, DC and Output Power Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010


other parts : XP1015-BD  XP1015-BD-000V  
XP1015-BD-EV1 PDF
MIMIX
Mimix Broadband
XP1015-BD-EV1 GaAs MMIC Power Amplifier XP1015-BD-EV1 PDF
MIMIX
Mimix Broadband
XP1015-BD-000V 43.5-46.5 GHz GaAs MMIC Power Amplifier

General Description
Mimix Broadbands three stage balanced 43.5 - 46.5 GHz GaAs MMIC power amplifier has a small signal gain of 13.0 dB with a +31.0 dBm P1dB output compression point. The device also includes Lange couplers to achieve good input and output return loss This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
• Excellent Saturated Output Stage
• Balanced Design Provides Good Input/Output Match
• 13.0 dB Small Signal Gain
• +31.0 dBm P1dB Compression Point
• 100% On-Wafer RF, DC and Output Power Testing
• 100% Visual Inspection to MIL-STD-883 Method 2010


other parts : XP1015-BD  XP1015-BD-EV1  
XP1015-BD-000V PDF
MIMIX
Mimix Broadband
XP1015-BD-000V GaAs MMIC Power Amplifier XP1015-BD-000V PDF

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