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TRF7003

  

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TI
Texas Instruments
TRF7003 MOSFET POWER AMPLIFIER

description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS™ process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).

● Wide Operating Frequency Range up to 1000 MHz
● High Output Power:
   – Typical Value of 32 dBm at 4.8 V and 900MHz
   – Typical Value of 29 dBm at 3.6 V and 900 MHz
● High Gain:
   – Typical Value of 9 dB at 4.8 V and 900 MHz at 32-dBm Output Power
      High Power-Added Efficiency (PAE):
   – Typical Value of 50% at 32-dBm Output Power
● Low Cost
● Extremely Rugged:
   – Sustains 20:1 Load Mismatch
● Suitable for Various Wireless Applications
● Low Leakage Current <1µA
● SOT-89 Plastic Power Package
● 1000 V Human Body Model ESD Protection on Gate and Drain


other parts : TRF7003PK  TRF7003PKR  
TRF7003 PDF
TI
Texas Instruments
TRF7003PK MOSFET POWER AMPLIFIER

description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS™ process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).

● Wide Operating Frequency Range up to 1000 MHz
● High Output Power:
   – Typical Value of 32 dBm at 4.8 V and 900MHz
   – Typical Value of 29 dBm at 3.6 V and 900 MHz
● High Gain:
   – Typical Value of 9 dB at 4.8 V and 900 MHz at 32-dBm Output Power
      High Power-Added Efficiency (PAE):
   – Typical Value of 50% at 32-dBm Output Power
● Low Cost
● Extremely Rugged:
   – Sustains 20:1 Load Mismatch
● Suitable for Various Wireless Applications
● Low Leakage Current <1µA
● SOT-89 Plastic Power Package
● 1000 V Human Body Model ESD Protection on Gate and Drain


other parts : TRF7003  TRF7003PKR  
TRF7003PK PDF
TI
Texas Instruments
TRF7003PKR MOSFET POWER AMPLIFIER

description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS™ process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).

● Wide Operating Frequency Range up to 1000 MHz
● High Output Power:
   – Typical Value of 32 dBm at 4.8 V and 900MHz
   – Typical Value of 29 dBm at 3.6 V and 900 MHz
● High Gain:
   – Typical Value of 9 dB at 4.8 V and 900 MHz at 32-dBm Output Power
      High Power-Added Efficiency (PAE):
   – Typical Value of 50% at 32-dBm Output Power
● Low Cost
● Extremely Rugged:
   – Sustains 20:1 Load Mismatch
● Suitable for Various Wireless Applications
● Low Leakage Current <1µA
● SOT-89 Plastic Power Package
● 1000 V Human Body Model ESD Protection on Gate and Drain


other parts : TRF7003  TRF7003PK  
TRF7003PKR PDF

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