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TLP291

  

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Toshiba
Toshiba
TLP291 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

Power Supplies Programmable Controllers Hybrid ICs

TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.

● Collector-Emitter Voltage : 80 V (min)
● Current Transfer Ratio : 50% (min)
   Rank GB : 100% (min)
● Isolation Voltage : 3750 Vrms (min)
● Operation temperature: -55 to 110 ˚C
● UL recognized : UL1577, File No. E67349
● cUL approved : CSA Component Acceptance Service No.5A,
   File No. 67349
● SEMKO aprroved:
   EN 60065: 2002, Approved no. 1200315
   EN 60950-1: 2001, EN 60335-1: 2002,
   Approved no. 1200315
● BSI approved
   : BS EN 60065: 2002, Approved no. 9036
   : BS EN 60950-1: 2006, Approved no. 9037
● Option (V4)
   VDE approved: EN 60747-5-5 Certificate, No. 40009347
   Maximum operating insulation voltage: 707 Vpk
   Highest permissible over-voltage: 6000 Vpk
   (Note) When a EN 60747-5-5 approved type is needed,
      please designate the “Option(V4)”
   Construction Mechanical Rating
      Creepage distance:5.0mm(min)
      Clearance:5.0mm(min)
      Insultion thickness:0.4mm(min)

TLP291 PDF
Toshiba
Toshiba
TLP291-4_2011 Photocouplers GaAs Infrared LED & Photo Transistor

Programmable Controllers Power Supplies

The Toshiba TLP291-4 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291-4 is housed in the SO16 package, very small and thin coupler.
Since TLP291-4 are guaranteed wide operating temperature (Ta=-55 to 110 ˚C), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.

● Collector-Emitter Voltage : 80 V (min)
● Current Transfer Ratio : 50% (min)
   Rank GB : 100% (min)
● Isolation Voltage : 2500 Vrms (min)
● Guaranteed performance over -55 to 110 ˚C
● UL approved : UL1577 , File No. E67349
   cUL approved : CSA Component Acceptance Service No.5A
● Option (V4) type
   VDE approved : EN60747-5-2
   (Note) : When a EN60747-5-2 approved type is needed,
      Please designate “Option(V4)”
● Construction mechanical rating
   Creepage distance : 5.0 mm(min)
   Clearance : 5.0 mm(min)
   Insulation thickness : 0.1 mm(min)

TLP291-4 PDF
Toshiba
Toshiba
TLP291-4 Photocouplers GaAs Infrared LED & Photo Transistor

General
The Toshiba TLP291-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.
The TLP291-4 Photocoupler is housed in the very small and thin SO16 package.
Since the TLP291-4 is guaranteed over a wide operating temperature range (Ta = -55 to 110), it is suitable for high-density surface mount applications such as programmable controllers.

Features
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50% (min)
   GB Rank: 100% (min)
(3) Isolation voltage: 2500 Vrms (min)
(4) Operating temperature: -55 to 110
(5) Safety standards
   UL-approved UL1577 File No.E67349
   cUL-approved CSA Component Acceptance Service No.5A File No.E67349
   VDE approved EN60747-5-2 Certificate No. 40009347 (Note)
  
Applications
• Programmable Logic Controllers (PLCs)
• Switching Power Supplies
• Simplex/Multiplex Data Transmission

TLP291-4 PDF

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