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SI4420DYPBF

  

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IR
International Rectifier
SI4420DYPBF HEXFET® Power MOSFET

Description
This N-channel HEXFET® power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications.
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.

● N-Channel MOSFET
● Low On-Resistance
● Low Gate Charge
● Surface Mount
● Logic Level Drive
● Lead-Free

SI4420DYPBF PDF

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