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IRFR224B

  

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Fairchild
Fairchild Semiconductor
IRFR224B 250V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features
• 3.8A, 250V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 13.5 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


other parts : IRFU224B  
IRFR224B PDF

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