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G103 Datasheet PDF

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*G103*   *G103-*   *G1030*   *G1032*   *G1034*   *G1035*   *G1039*   *G103A*   *G103C*   *G103D*   *G103E*   *G103G*   *G103J*   *G103K*   *G103M*   *G103N*   *G103Q*   *G103R*   *G103U*   
Manufacturer
Part Name
Description
PDF
ETC
Unspecified
GaAlAs (880 nm peak) Photodiode
Match & Start : G103
ETC
Unspecified
GaAlAs (880 nm peak) Photodiode
NJSEMI
New Jersey Semiconductor
SIDACs
TAYCHIPST
Shenzhen Taychipst Electronic Co., Ltd
Silicon Z–Diodes
EIC
Electronics Industry
SIDACs
EIC
Electronics Industry
SIDACs
NJSEMI
New Jersey Semiconductor
SIDACs
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge
Intersil
Intersil
10A, 400V and 500V N-Channel IGBTs
Infineon
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Infineon
Infineon Technologies
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
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