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2SK2685

  

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Hitachi
Hitachi -> Renesas Electronics
2SK2685 Silicon N-Channel Junction FET

Application
   VHF amplifier


other parts : 2SK217  K217  K2685  
2SK2685 PDF
Hitachi
Hitachi -> Renesas Electronics
2SK2685 GaAs HEMT

Features
• Excellent low noise characteristics.
   Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)
• High associated gain.
   Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)
• High voltage.
   VDS = 6 or more voltage.
• Small package. (CMPAK-4)

Application
   UHF low noise amplifier


other parts : K2685  
2SK2685 PDF
Hitachi
Hitachi -> Renesas Electronics
2SK2685 No description available. 2SK2685 PDF

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