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2SK1968

  

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Iscsemi
Inchange Semiconductor
2SK1968 N-Channel MOSFET Transistor

DESCRIPTION
• Drain Current –ID=12A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 600V(Min)
• Fast Switching Speed
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Suitable for switching regulator


other parts : K1968  
2SK1968 PDF
Renesas
Renesas Electronics
2SK1968 Silicon N Channel MOS FET

Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for switching regulator
• Low drive current

Application
   High speed power switching


other parts : 2SK1968-E  K1968  
2SK1968 PDF
Hitachi
Hitachi -> Renesas Electronics
2SK1968 Silicon N-Channel MOS FET

Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
• Low drive current

Application
   High speed power switching


other parts : K1968  
2SK1968 PDF
Renesas
Renesas Electronics
2SK1968 Silicon N-Channel MOS FET 2SK1968 PDF
Renesas
Renesas Electronics
2SK1968-E Silicon N Channel MOS FET

Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for switching regulator
• Low drive current

Application
   High speed power switching


other parts : 2SK1968  K1968  
2SK1968-E PDF

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