STM9930A Даташит - ETC
производитель

ETC
[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Description:
This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application.
FEATUREs:
1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ @VGS=10V
P-Channel: V DS=-30V,ID=-6A,RDS(ON)<65mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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производитель
N-Channel and P-Channel MOSFET use advanced trench Technology
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N-Channel and P-Channel MOSFET use advanced trench Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
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N-Chanel and P-Channel MOSFET use advanced trench technology
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P-Chanel and N-Channel MOSFET use advanced trench technology
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P-Chanel and N-Channel MOSFET use advanced trench technology
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P-Chanel and N-Channel MOSFET use advanced trench technology
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