MPSU07 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
NPN SILICON ANNULAR AMPLIFIER TRANSISTOR
. . . designed for general-purpose, high-voltage amplifier and driver applications.
• High Collector-Emitter Breakdown Voltage —
BVCEO = 100 Adc (Min) @ IC = 1.0 mAdc
• High Power Dissipation - PD = 10W @ TC = 25°C
• Complement to PNP MPS-U57
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производитель
NPN SILICON ANNULAR AMPLIFIER TRANSISTORS
New Jersey Semiconductor
NPN Silicon Annular Transistor
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
PNP SILICON ANNULAR AMPLIFIER TRANSISTORS
Motorola => Freescale
PNP silicon annular amplifier transistors
New Jersey Semiconductor
NPN Silicon Annular Transistors
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
Motorola => Freescale
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor
NPN SILICON ANNULAR TRANSISTORS
Motorola => Freescale
NPN SILICON ANNULAR TRANSISTORS
New Jersey Semiconductor