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B20NM50 Даташит - STMicroelectronics

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B20NM50

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14 Pages

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287.3 kB

производитель
ST-Microelectronics
STMicroelectronics 

DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

■ TYPICAL RDS(on) = 0.20Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

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Номер в каталоге
Компоненты Описание
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производитель
N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
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Unspecified
N-channel 55V - 0.005Ω - 80A - TO-220 /FP - I2PAK - D2PAK STripFET™ II Power MOSFET ( Rev : 1999_10 )
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N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET
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N-channel 55V - 0.005Ω - 80A - TO-220 /FP - I2PAK - D2PAK STripFET™ II Power MOSFET
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N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET
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