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AO4622 PDF
AO4622 Даташит - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
производитель

SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description:
This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application.
FEATUREs:
N-Channel:V DS=20V,ID=6.8A,RDS(ON)<17mΩ @VGS=4.5V
P-Channel: V DS=-30V,ID=-5.1A,RDS(ON)<55@VGS=-10
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON).
4) Excellent package for good heat dissipation.
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производитель
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
Unspecified
N-Channel and P-Channel MOSFET use advanced trench Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel and P-Channel MOSFET use advanced trench D1 Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
N-Chanel and P-Channel MOSFET use advanced trench technology
Unspecified
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.