NAND04GA3C2N6E Просмотр технического описания (PDF) - STMicroelectronics

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производитель

NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

14 Part numbering

14 Part numbering

Table 22. Ordering Information Scheme

Example:

NAND04GW3C2A

N

1

E

Device Type

NAND Flash Memory

Density

04G = 4Gb

Operating Voltage

W = VDDQ = 2.7 to 3.6V

A = VDDQ = 1.7V to 1.95V

Bus Width

3 = x8

Family Identifier

C = 2112 Bytes Page MLC

Device Options

2 = Chip Enable Don't Care Enabled

Product Version

A = First Version

Package

N = TSOP48 12 x 20mm (all devices)

Temperature Range

1 = 0 to 70 °C

6 = −40 to 85 °C

Option

E = ECOPACK Package, Standard Packing

F = ECOPACK Package, Tape & Reel Packing

Devices are shipped from the factory with the memory content bits, in valid blocks, erased to

’1’. For further information on any aspect of this device, please contact your nearest ST

Sales Office.

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