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STD80N6F6(2014) Datasheet - STMicroelectronics

STD80N6F6 image

Part Name
STD80N6F6

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15 Pages

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680.4 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

• Designed for automotive applications and
   AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness

Applications
• Switching applications

 

Part Name
Description
PDF
MFG CO.
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Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package
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N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
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N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package ( Rev : 2016 )
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Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET™ Power MOSFET in a DPAK package
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Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package
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