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STD80N6F6 Datasheet - STMicroelectronics

STD80N6F6 image

Part Name
STD80N6F6

Other PDF
  2014  

PDF
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page
16 Pages

File Size
762.4 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features
• AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss

Applications
• Switching applications

 

Part Name
Description
PDF
MFG CO.
Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package
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Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package
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Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package
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Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
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N-channel 60 V, 3.1 mΩ typ., 80 A STripFET F7 Power MOSFET in a DPAK package
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N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package
STMicroelectronics
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
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N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package ( Rev : 2016 )
STMicroelectronics

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