datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  >>> STD80N6F6 PDF

STD80N6F6 Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STD80N6F6 image

Part Name
STD80N6F6

Other PDF
  no available.

PDF
DOWNLOAD     

page
4 Pages

File Size
935.8 kB

MFG CO.
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER

Description: 
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=60V,ID=130A,RDS(ON)<3.5mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
N-Channel MOSFET uses advanced SGT technology
Unspecified
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-channel Mosfet Uses Advanced Sgt Technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]