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PHX18NQ11 Datasheet - Philips Electronics

PHX18NQ11 image

Part Name
PHX18NQ11

Other PDF
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page
12 Pages

File Size
78.9 kB

MFG CO.
Philips
Philips Electronics Philips

Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.

Features
■ Low on-state resistance
■ Fast switching
■ Isolated mounting base
■ Low thermal resistance

Applications
■ DC-to-DC converters
■ Switched-mode power supplies

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 
 

Part Name
Description
PDF
MFG CO.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved

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