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PHKD3NQ10T Datasheet - NXP Semiconductors.

PHKD3NQ10T image

Part Name
PHKD3NQ10T

Other PDF
  no available.

PDF
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page
12 Pages

File Size
173.5 kB

MFG CO.
NXP
NXP Semiconductors. NXP

General description
Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics
■ Suitable for use in compact designs
   due to low profile

Applications
■ DC-to-DC converters 
■ Motor and relay drivers

 

Part Name
Description
PDF
MFG CO.
Dual N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
Philips Electronics
N-channel TrenchMOS standard level FET
NXP Semiconductors.

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